| PART |
Description |
Maker |
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| STL40N75LF3 |
N-channel 75 V, 16 mOhm typ., 10 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 package
|
ST Microelectronics
|
| STP105N3LL |
N-channel 30 V, 2.7 mOhm typ., 150 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| RTP315N10F7 |
Aerospace and defence N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
|
ST Microelectronics
|
| STP190N55LF3 |
N-channel 55 V, 2.9 miliohm, 120 A, TO-220
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| MC10XS3435BHFK MC10XS3435DHFK |
Quad High Side Switch (Dual 10 mOhm, Dual 35 mOhm)
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| MC10XS3412DPNA MC10XS3412CPNA 10XS341209 |
Quad High Side Switch (Dual 10 mOhm, Dual 12 mOhm)
|
Freescale Semiconductor, Inc
|
| MC10XS3435BPNA MC10XS3435DPNA 10XS343509 MC10XS343 |
Quad High Side Switch (Dual 10 mOhm, Dual 35 mOhm)
|
Freescale Semiconductor, Inc
|
